| 12/18/2023 | 8541290000 | FIELD TRANSIS | XXXXXXXXXX | 30 | N/A | 6 | China | HONGKONG |
| 12/18/2023 | 8541290000 | FIELD TRANSIS | XXXXXXXXXX | 60 | N/A | 31 | China | HONGKONG |
| 12/14/2023 | 8541290000 | TRANSISTOR, THE PRODUCT IS A FIELD TRANSISTOR WITH MAXIMUM POWER | XXXXXXXXXX | 670 | N/A | 2968 | Korea | ШЭНЬЧЖЭНЬ |
| 12/14/2023 | 8541290000 | TRANSISTOR, THE PRODUCT IS A FIELD TRANSISTOR WITH MAXIMUM POWER | XXXXXXXXXX | 670 | N/A | 2968 | Korea | ШЭНЬЧЖЭНЬ |
| 12/13/2023 | 8541290000 | TRANSISTORS: FIELD TRANSISTOR 170 W ART: FQP22N30 - 20 PCS, TRANSISTOR SOFTWARE | XXXXXXXXXX | 4425 | N/A | 3158 | N/A | SHENZHEN |
| 12/13/2023 | 8541290000 | TRANSISTORS: FIELD TRANSISTOR 170 W ART: FQP22N30 - 20 PCS, TRANSISTOR SOFTWARE | XXXXXXXXXX | 4425 | N/A | 3158 | N/A | SHENZHEN |
| 12/12/2023 | 8541290000 | FIELD TRANSIS | XXXXXXXXXX | 2987 | N/A | 277 | Thailand | MOSCOW |
| 12/12/2023 | 8541290000 | HETEROSTRUCTURAL FIELD TRANSISTOR. MANUFACTURED USING PHEMT TECHNOLOGY | XXXXXXXXXX | 500 | N/A | 28520 | United States | ШЭНЬЧЖЭНЬ |
| 12/12/2023 | 8541290000 | FIELD TRANSISTOR MANUFACTURED USING HEMT TECHNOLOGY BASED ON GALLIUM NITRIDE, NOMINAL GATE LENGTH 15 µM. OUTPUT POWER 39 DBM. POWER DISPERSION: TYPE | XXXXXXXXXX | 120 | N/A | 7804 | United States | ШЭНЬЧЖЭНЬ |
| 12/12/2023 | 8541290000 | FIELD TRANSISTOR MANUFACTURED USING HEMT TECHNOLOGY BASED ON GALL NITRIDE | XXXXXXXXXX | 120 | N/A | 7804 | United States | ШЭНЬЧЖЭНЬ |