| 1/25/2024 | 8541100009 | SILICON DIODES, EPITAXIAL-PLANAR, DIFFUSION AND EPITAXIAL-DIFFUSION, FOR CONVERTING AC VOLTAGE, FOR INDUSTRIAL APPLICATION: | XXXXXXXXXX | 3 | ШТ | 118.31 | United Arab Emirates | GMOSCOW |
| 1/25/2024 | 8541100009 | DIODES (STABILITRONS) SILICON, ALLOY AND EPITAXIAL, FOR VOLTAGE STABILIZATION IN RADIOELECTRONIC EQUIPMENT, WORKING AMBIENT TEMPERATURE RANGE FROM -60 TO +125 °C, FOR INDUSTRIAL USE: | XXXXXXXXXX | 3 | ШТ | 16.04 | United Arab Emirates | GMOSCOW |
| 1/22/2024 | 8541100009 | DIODES (STABILITRONS) SILICON AND DIODE MATRICES, FOR VOLTAGE STABILIZATION, FOR USE IN CURRENT SWITCHES AND PULSE CIRCUITS, FOR INDUSTRIAL APPLICATIONS: | XXXXXXXXXX | 3 | ШТ | 5382.31 | United Arab Emirates | GMOSCOW |
| 12/26/2023 | 8541100009 | SILICON DIODES. DIFFUSION, MAXIMUM REVERSE | XXXXXXXXXX | 0 | 0 | 6.97 | United Arab Emirates | MOSCOW |
| 12/25/2023 | 8541100009 | SILICON DIODES, DIFFUSION. FOR CONVERSION | XXXXXXXXXX | 0 | 0 | 105.05 | United Arab Emirates | MOSCOW |
| 12/20/2023 | 8541100009 | SILICON, DIFFUSION-ALLOY DIODES (ZENER DIODES), | XXXXXXXXXX | 0 | 0 | 7.3 | United Arab Emirates | MOSCOW |
| 12/20/2023 | 8541100009 | SILICON DIODES. DIFFUSION, FOR PREO | XXXXXXXXXX | 0 | 0 | 29.5 | United Arab Emirates | MOSCOW |
| 12/20/2023 | 8541100009 | SILICON DIODES. DIFFUSION, FOR PREO | XXXXXXXXXX | 0 | 0 | 29.5 | United Arab Emirates | MOSCOW |
| 12/20/2023 | 8541100009 | SILICON, DIFFUSION-ALLOY DIODES (ZENER DIODES), | XXXXXXXXXX | 0 | 0 | 7.3 | United Arab Emirates | MOSCOW |
| 12/19/2023 | 8541100009 | SILICON DIODES (ZENER DRODES), DIFFUSION-ALLOY | XXXXXXXXXX | 0 | 0 | 38.06 | United Arab Emirates | MOSCOW |