| 3/13/2024 | 8536109000 | FUSE FOR PROTECTING BRUSHLESS EXCITER DIODES. RATED VOLTAGE 1000 V, RATED CURRENT 750 A. PURPOSE: PROTECTION OF ELECTRIC CIRCUITS. APPLICATION: GENERAL INDUSTRIAL | XXXXXXXXXX | 1 | N/A | 3241519.83 | India | DELHI |
| 12/21/2023 | 8541100009 | DIODES. MATERIAL IS SILICON. OPERATING TEMPERATURE 125 DEG. C., APPLY | XXXXXXXXXX | 0 | 0 | 33603.08 | India | MUMBAI |
| 12/21/2023 | 8541100009 | DIODES. MATERIAL IS SILICON. OPERATING TEMPERATURE 125 DEG. C., APPLY | XXXXXXXXXX | 0 | 0 | 33603.08 | India | MUMBAI |
| 12/19/2023 | 8541100009 | DIODES, MATERIAL-SILICON. OPERATING TEMPERATURE 125 DEG. C., APPLIED | XXXXXXXXXX | 0 | 0 | 18481.45 | India | MOSCOW |
| 12/19/2023 | 8541100009 | DIODES, MATERIAL-SILICON. OPERATING TEMPERATURE 125 DEG. C., APPLIED | XXXXXXXXXX | 0 | 0 | 18481.45 | India | MOSCOW |
| 11/30/2023 | 8541100009 | DIODES: | XXXXXXXXXX | 0 | 0 | 15857.97 | India | DELHI |
| 11/17/2023 | 8541100009 | SILICON DIODES, DIFFUSION. REPEATING PULSE REVERSE VOLTAGE 200V, OPERATING TEMPERATURE RANGE FROM -60 TO +125 °C, FOR APPLICATION IN PRODUCTS | XXXXXXXXXX | 0 | 0 | 13.5 | India | G MOSCOW |
| 11/15/2023 | 8541100009 | SILICON DIODES, DIFFUSION, REPEATING PULSE REVERSE VOLTAGE 200V. OPERATING TEMPERATURE RANGE FROM -60 TO +125 °C, FOR APPLICATION IN PRODUCTS | XXXXXXXXXX | 0 | 0 | 13.5 | India | G MOSCOW |
| 11/2/2023 | 8541100009 | SILICON DIODES, DIFFUSION. REPEATING PULSE REVERSE VOLTAGE 200V, OPERATING TEMPERATURE RANGE FROM -60 TO +125 °C, FOR APPLICATION IN PRODUCTS | XXXXXXXXXX | 0 | 0 | 13.5 | India | G MOSCOW |
| 11/2/2023 | 8541490000 | CAT. 14.2 SEMICONDUCTOR PHOTOSENSITIVE DEVICES, NOT ASSEMBLED IN MODULES, NOT MOUNTED INTO PANELS. GOODS RECEIVED AS A RESULT OF OPERATIONS ON | XXXXXXXXXX | 0 | 0 | 132 | India | AFS JORHAT |